BSM150GB170DN2 |
RFQ for BSM150GB170DN2 |
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| Product | Manufacturers | Pack | D/C |
| BSM150GB170DN2 | - | MODULE | N/A |
Features |
| • Half-bridge• Including fast free-wheeling diodes• Package with insulated metal base plate• R G on,min = 10 Ohm |
|
Parameter |
Symbol |
Values |
Unit |
|
Collector-emitter voltage |
VCE |
1700 |
V |
|
Collector-gate voltage RGE = 20 k |
VCGR |
1700 | |
|
Gate-emitter voltage |
VGE |
± 20 | |
|
DC collector current TC = 25 °C TC = 80 °C |
IC |
220 150 |
A |
|
Pulsed collector current, tp = 1 ms TC = 25 °C TC = 80 °C |
lCpuls |
440 300 | |
|
Power dissipation per IGBT TC = 25 °C |
Ptot |
1250 |
W |
|
Chip temperature |
Tj |
+ 150 |
°C |
|
Storage temperature |
Tstg |
-55 ... + 150 |
°C |